碳化硅功率MOSFET的开关暂态过程与损耗分析
首发时间:2020-07-14
摘要:本文针对碳化硅MOSFET宽温度范围的静态参数测量、开关暂态过程展开了研究和分析。基于B1505A测试平台,对碳化硅功率MOSFET在不同温度下的输出特性曲线、转移特性曲线、阈值电压、导通电阻等进行了测量。针对其开关暂态过程,本文基于实验测量结果和典型电路建立了数学模型,针对不同驱动电阻、温度等因素对器件开关过程及损耗的影响进行了分析,并给出了变电阻驱动时,器件的开关情况,对驱动电路的设计和参数选取起到了简化和帮助作用。
关键词: 电力电子与电力传动 碳化硅MOSFET 参数测量 开关过程 建模
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Switching Transient Process and Loss Distribution of Silicon Carbide Power MOSFET
Abstract:In this paper, the measurement of static parameters and the transient process of switch in Switching Transient Process and Loss Distribution of Silicon Carbide Power MOSFETthe wide temperature range of silicon carbide MOSFET are studied and analyzed. Based on B1505A test platform, the output characteristic curve, transfer characteristic curve, threshold voltage and on resistance of SiC Power MOSFET at different temperatures are measured. Based on the experimental results and typical circuits, this paper establishes a mathematical model for the transient process of the switch, analyzes the influence of different driving resistance, temperature and other factors on the switching process and loss of the device, and gives the switching situation of the device when the variable resistance drives, which simplifies and helps the design of the driving circuit and the selection of parameters.
Keywords: Power electronics and electric drives Silicon carbide MOSFET parameter measurement switching process modeling
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